BSS139 H6327

BSS139 SIPMOS® Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode V DS 250 V R DS(on),max 30 Ω I DSS,min 0.03 A • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead-plating; RoHS compliant PG-SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS139 0) PG-SOT-23 Q62702-S612 E6327: 3000 pcs/reel STs BSS139 0) PG-SOT-23 Q67042-S4296 E6906: 3000 pcs/reel sorted in V GS(th) bands1) STs Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 0.10 T A=70 °C 0.08 I D,pulse T A=25 °C 0.4 Reverse diode dv /dt dv /dt I D=0.1 A,V DS=200 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage V GS Pulsed drain current ±20 ESD sensitivity (HBM) as per MIL-STD 883 P tot Operating and storage temperature T j, T stg T A=25 °C IEC climatic category; DIN IEC 68-1 1) A kV/µs V Class 1 Power dissipation 0) 6 Unit 0.36 W -55 ... 150 °C 55/150/56 also available as non Pb-free on request see table on next page and diagram 11 Rev. 1.5 page 1 2006-04-27 BSS139 Parameter Values Symbol Conditions Unit min. typ. max. - - 350 Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=-3 V, I D=250 µA 250 - - Gate threshold voltage V GS(th) V DS=3 V, I D=56 µA -2.1 -1.4 -1 Drain-source cutoff current I D(off) V DS=250 V, V GS=-3 V, T j=25 °C - - 0.1 V DS=250 V, V GS=-3 V, T j=125 °C - - 10 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 10 nA On-state drain current I DSS V GS=0 V, V DS=10 V 30 - - mA Drain-source on-state resistance R DS(on) V GS=0 V, I D=15 mA - 12.5 30 V GS=10 V,I D=0.1 mA - 7.8 14 |V DS|>2|I D|R DS(on)max, I D=0.08 A 0.060 0.13 - S -1.2 - -1 V K -1.35 - -1.15 L -1.5 - -1.3 M -1.65 - -1.45 N -1.8 - -1.6 Transconductance g fs Ω Threshold voltage V GS(th) sorted in bands2) V GS(th) J 2) V DS=3 V, I D=56 µA Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 1.5 page 2 2006-04-27 BSS139 Parameter Values Symbol Conditions Unit min. typ. max. - 60 76 - 6.7 8.4 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 2.6 3.3 Turn-on delay time t d(on) - 5.8 8.7 Rise time tr - 5.4 8.1 Turn-off delay time t d(off) - 29 43 Fall time tf - 182 273 Gate to source charge Q gs - 0.14 0.21 Gate to drain charge Q gd - 1.3 2.0 Gate charge total Qg - 2.3 3.5 Gate plateau voltage V plateau - -0.28 - V - - 0.10 A - - 0.4 - 0.81 1.2 V - 8.6 12.9 ns - 2.1 3.1 nC V GS=-3 V, V DS=25 V, f =1 MHz V DD=125 V, V GS=-3...5 V, I D=0.04 A, R G=6 Ω pF ns Gate Charge Characteristics V DD=200 V, I D=0.04 A, V GS=-3 to 5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev. 1.5 T A=25 °C V GS=-3 V, I F=0.1 A, T j=25 °C V R=50 V, I F=0.04 A, di F/dt =100 A/µs page 3 2006-04-27 BSS139 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 0.4 0.12 0.3 I D [A] P tot [W] 0.08 0.2 0.04 0.1 0 0 0 40 80 120 0 160 40 80 T A [°C] 120 T A [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 100 160 103 limited by on-state resistance 10 µs 100 µs 1 ms 10-1 0.5 2 10 0.2 Z thJA [K/W] I D [A] 10 ms 10-2 0.1 0.05 101 DC 0.02 0.01 single pulse -3 10 10-4 100 0 10 1 2 10 10 3 10 V DS [V] Rev. 1.5 10-4 10-3 10-2 10-1 100 101 102 t p [s] page 4 2006-04-27 BSS139 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 30 0.2 V 10 -0.2 V 0V -0.1 V V1 0.2 V 0.5 V 0.1 V 0.16 V 0.5 20 R DS(on) [Ω] I D [A] 0.12 V 0.2 0.08 V 0.1 1V 10 V0 V 0.1- 10 V V 0.2- 0.04 0 0 0 2 4 6 8 0 10 0.04 V DS [V] 0.08 0.12 0.16 0.15 0.20 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 0.3 0.25 0.25 0.2 0.2 25 °C 0.15 g fs [S] I D [A] -55 °C 0.15 150 °C 0.1 0.1 0.05 0.05 0 0 -2 -1 0 1 Rev. 1.5 0.00 0.05 0.10 I D [A] V GS [V] page 5 2006-04-27 BSS139 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.015 A; V GS=0 V V GS(th)=f(T j); V DS=3 V; I D=56 µA 60 0 50 -0.5 40 -1 %98 V GS(th) [V] R DS(on) [Ω] parameter: I D 30 20 %98 typ -1.5 -2 %2 typ 10 -2.5 0 -3 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Threshold voltage bands 12 Typ. capacitances I D=f(V GS); V DS=3 V; T j=25 °C C =f(V DS); V GS=-3 V; f =1 MHz 10 1000 1 100 M N 0.1 C [pF] I D [mA] Ciss K L J 10 Coss 56 µA Crss 0.01 1 -2 -1.5 -1 -0.5 Rev. 1.5 0 5 10 15 20 25 30 V DS [V] V GS [V] page 6 2006-04-27 BSS139 13 Forward characteristics of reverse diode 15 Typ. gate charge I F=f(V SD) V GS=f(Q gate); I D=0.1 A pulsed parameter: T j parameter: V DD 1 8 6 0.2 VDS(max) 0.5 VDS(max) 150 °C, 98% 0.1 0.8 VDS(max) 4 25 °C V GS [V] 150 °C I F [A] 25 °C, 98% 2 0 0.01 -2 -4 0.001 0 0.4 0.8 1.2 1.6 V SD [V] 0 1 2 3 Q gate [nC] 16 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 µA 300 V BR(DSS) [V] 280 260 240 220 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.5 page 7 2006-04-27 BSS139 Package Outline: Footprint: Packaging: Dimensions in mm Rev. 1.5 page 8 2006-04-27 BSS139 Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.5 page 9 2006-04-27